4953B - Tuofeng Semiconductor

4953B Dual P-Channel MOSFET

This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings . Applications • Power management • Load switch • Battery protection Features • –3.5 A, –20 V RDS(ON) = 70 mΩ @ VGS = –4.5V RDS(ON) = 135mΩ @ .

Features

•
  –3.5 A,
  –20 V RDS(ON) = 70 mΩ @ VGS =
  –4.5V RDS(ON) = 135mΩ @ VGS =
  –2.5 V
• Low gate charge (6nC typical)
• Fast switching speed
• High performance trench technology for extremely low RDS(ON)
• High power and current handling capability DD1DD22D2 DD1 SO-8 Pin 1 SO-8 S2GG2 SS1GS1 S Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS V GSS Parameter Drain-Source Voltage Gate-Source Voltage ID Drain Current
  – Continuous (Note 1a) PD TJ, TSTG Power Dissipation for Dual Operation Operating and Storage Junction Temperature Range 5 6 Q1 7 Q2 8 4 3 2 1 Ratings
  –20.