Naina Semiconductor emiconductor Ltd. Features • Diffused Series • Industrial grade • Available in Normal and Reverse polarity • Metric and UNF thread type 40NS 40NS(R) Standard Recovery Diodes (Stud and Lead Type) Electrical Specifications (TE = 250C, unless otherwise noted) Symbol IF(AV) VFM IFSM IFRM It 2 Parameters Maximum avg. forward current @ TE =.
• Diffused Series
• Industrial grade
• Available in Normal and Reverse polarity
• Metric and UNF thread type
40NS 40NS(R)
Standard Recovery Diodes (Stud and Lead Type)
Electrical Specifications (TE = 250C, unless otherwise noted)
Symbol IF(AV) VFM IFSM IFRM It
2
Parameters Maximum avg. forward current @ TE = O 150 C Maximum peak forward voltage drop @ rated IF(AV) Maximum peak one cycle (non-rep) surge current @ 10 msec Maximum peak repetitive surge current 2 rep) for 5 to Maximum I t rating (non-rep) 10 msec
Values 40 1.2 500 200 1200
Units A V A A
(DO DO-203AB (DO-5)
A sec
2
Electri.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 40N03 |
SeCoS |
N-Channel Enhancement Mode PowerMos FET | |
2 | 40N03GP |
Advanced Power Electronics |
N-channel Enhancement-mode Power MOSFET | |
3 | 40N03P |
Silicon Standard |
SSM40N03P | |
4 | 40N05 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
5 | 40N06 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
6 | 40N06 |
Din-Tek |
DTU40N06 | |
7 | 40N10 |
VBsemi |
N-Channel MOSFET | |
8 | 40N10 |
CHONGQING PINGYANG |
N-CHANNEL MOSFET | |
9 | 40N10 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
10 | 40N10 |
DinTek |
DTU40N10 | |
11 | 40N10B |
CHONGQING PINGYANG |
N-CHANNEL MOSFET | |
12 | 40N10F |
CHONGQING PINGYANG |
N-CHANNEL MOSFET |