3SK309 - Hitachi Semiconductor

3SK309 UHF RF Amplifier

3SK309 GaAs N Channel Dual Gate MES FET UHF RF Amplifier ADE-208-472 A 2nd. Edition Features • Capable of low voltage operation (VDS = 1.5 to 3 V) • Excellent low noise characteristics (NF = 1.25 dB typ. at f = 900 MHz) • High power gain (PG = 21.0 dB typ. at f = 900 MHz) Outline CMPAK–4 2 3 4 1 1. Source 2. Gate1 3. Gate2 4. Drain 3SK309 Absolute Maximu.

Features

• Capable of low voltage operation (VDS = 1.5 to 3 V)
• Excellent low noise characteristics (NF = 1.25 dB typ. at f = 900 MHz)
• High power gain (PG = 21.0 dB typ. at f = 900 MHz) Outline CMPAK
  –4 2 3 4 1 1. Source 2. Gate1 3. Gate2 4. Drain 3SK309 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate 1 to source voltage Gate 2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 6
  –4
  –4 18 100 125
  –55 to +125 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Gate 1 to.