3SK300 - Hitachi Semiconductor

3SK300 Silicon N-Channel Transistor

3SK300 Silicon N Channel Dual Gate MOS FET UHF / VHF RF Amplifier ADE-208-449 1st. Edition Features • Low noise figure NF = 1.0 dB typ. at f = 200 MHz • High gain PG = 27.6 dB typ. at f = 200 MHz Outline MPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain 3SK300 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate 1 to source voltage .

Features

• Low noise figure NF = 1.0 dB typ. at f = 200 MHz
• High gain PG = 27.6 dB typ. at f = 200 MHz Outline MPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain 3SK300 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate 1 to source voltage Gate 2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 14 ±8 ±8 25 150 150
  –55 to +150 Unit V V V mA mW °C °C 2 3SK300 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate 1 to source breakdown voltage Gate 2 to so.