The new SuperMESH3™ series is obtained through the combination of a further fine tuning of ST's well established strip-based PowerMESH™ layout with a new optimization of the vertical structure. In addition to reducing on-resistance significantly versus previous generation, special attention has been taken to ensure a very good dv/dt capability and higher mar.
Type STB3N62K3 STD3N62K3 STF3N62K3 STP3N62K3 STU3N62K3 VDSS 620 V 620 V 620 V 620 V 620 V RDS(on) max < 2.5 Ω < 2.5 Ω < 2.5 Ω < 2.5 Ω < 2.5 Ω ID 2.7 A 2.7 A 2.7 A(1) 2.7 A 2.7 A PD 45 W 45 W 20 W 45 W 45 W IPAK
3 1
3 2 1
1 3
DPAK
D²PAK
3 1 2
1 2 3
1. Limited by package
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100% avalanche tested Extremely high dv/dt capability Very low intrinsic capacitances Improved diode reverse recovery characteristics Zener-protected
TO-220
TO-220FP
Figure 1.
Internal schematic diagram
Application
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Switching applications
Description
The new SuperMESH3™ series is obtained through the combin.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 3N60 |
nELL |
N-Channel Power MOSFET | |
2 | 3N60 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
3 | 3N60 |
Unisonic Technologies |
N-CHANNEL POWER MOSFET | |
4 | 3N60-LC |
UTC |
600V N-CHANNEL POWER MOSFET | |
5 | 3N60-TC2 |
UTC |
N-CHANNEL MOSFET | |
6 | 3N60A |
Unisonic Technologies |
600V N-CHANNEL POWER MOSFET | |
7 | 3N60A4 |
Fairchild Semiconductor |
N-Channel IGBT | |
8 | 3N60K |
Unisonic Technologies |
600V N-CHANNEL POWER MOSFET | |
9 | 3N60K-MK |
Unisonic Technologies |
N-CHANNEL POWER MOSFET | |
10 | 3N60K-MT |
Unisonic Technologies |
N-CHANNEL POWER MOSFET | |
11 | 3N60Z |
Unisonic Technologies |
600V N-CHANNEL POWER MOSFET | |
12 | 3N65 |
Unisonic Technologies |
N-CHANNEL POWER MOSFET |