The UTC 3N60-LC is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies and adaptors. FEATURES * RDS(ON) ≤ 3.0 Ω @ VGS=10V, ID=1.5.
* RDS(ON) ≤ 3.0 Ω @ VGS=10V, ID=1.5A
* Fast switching capability
* Avalanche energy tested
* Improved dv/dt capability, high ruggedness
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
Package
3N60L-TM3-T
3N60G-TM3-T
TO-251
3N60L-TN3-R
3N60G-TN3-R
TO-252
3N60L-S08-R
3N60G-S08-R
SOP-8
Note: Pin Assignment: G: Gate D: Drain S: Source
Pin Assignment 12345678
Packing
G D S - - - - - Tube
G D S - - - - - Tape Reel
S S S G D D D D Tape Reel
MARKING
TO-251 / TO-252
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SOP-8
1 o.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 3N60-TC2 |
UTC |
N-CHANNEL MOSFET | |
2 | 3N60 |
nELL |
N-Channel Power MOSFET | |
3 | 3N60 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
4 | 3N60 |
Unisonic Technologies |
N-CHANNEL POWER MOSFET | |
5 | 3N60A |
Unisonic Technologies |
600V N-CHANNEL POWER MOSFET | |
6 | 3N60A4 |
Fairchild Semiconductor |
N-Channel IGBT | |
7 | 3N60K |
Unisonic Technologies |
600V N-CHANNEL POWER MOSFET | |
8 | 3N60K-MK |
Unisonic Technologies |
N-CHANNEL POWER MOSFET | |
9 | 3N60K-MT |
Unisonic Technologies |
N-CHANNEL POWER MOSFET | |
10 | 3N60Z |
Unisonic Technologies |
600V N-CHANNEL POWER MOSFET | |
11 | 3N62K3 |
STMicroelectronics |
STB3N62K3 | |
12 | 3N65 |
Unisonic Technologies |
N-CHANNEL POWER MOSFET |