3N180-E3 - UTC

3N180-E3 1800V N-CHANNEL POWER MOSFET

The UTC 3N180-E3 provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.  FEATURES0 * RDS(ON) ≤ 10.3 Ω @ VGS=10V, ID=1.5A * Low Reverse Transfer Capacitance * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness  .

Features

* RDS(ON) ≤ 10.3 Ω @ VGS=10V, ID=1.5A
* Low Reverse Transfer Capacitance
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness
 SYMBOL Power MOSFET
 ORDERING INFORMATION Ordering Number Lead Free Halogen Free 3N180L-TA3-T 3N180G-TA3-T 3N180L-TF1-T 3N180G-TF1-T 3N180L-TQ2-T 3N180G-TQ2-T 3N180L-TQ2-R 3N180G-TQ2-R Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220 TO-220F1 TO-263 TO-263 Pin Assignment 1 2 3 G D S G D S G D S G D S Packing Tube Tube Tube Tape Reel www.unisonic.com.tw Copyright © 2024 U.