3DF20F - INCHANGE

3DF20F NPN Transistor

·With TO-3 packaging ·Large collector current ·Low collector saturation voltage ·High power dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in DC-DC converter ·Driver of solenoid or motor ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Volt.

Features

RISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVCBO Collector-Base Sustaining Voltage IC= 5mA; IE= 0 BVCEO Collector-Emitter Sustaining Voltage IC= 5mA; IB= 0 BVEBO Emitter-Base Sustaining Voltage IE= 7mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 1A ICEO Collector Cutoff Current VCE= 100V; IB= 0 hFE DC Current Gain IC= 10A; VCE= 10V MIN MAX UNIT 450 V 300 V 6 V 2.3 V 1 mA 15 NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained he.