3DF1B - INCHANGE

3DF1B NPN Transistor

·With TO-66 packaging ·Large collector current ·Low collector saturation voltage ·High power dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in DC-DC converter ·Driver of solenoid or motor ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Vol.

Features

STICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVCBO Collector-Base Sustaining Voltage IC= 1mA; IE= 0 BVCEO Collector-Emitter Sustaining Voltage IC= 1mA; IB= 0 BVEBO Emitter-Base Sustaining Voltage IE= 0.5mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 0.75A; IB= 0.075A ICEO Collector Cutoff Current VCE= 50V; IB= 0 hFE DC Current Gain IC= 0.75A; VCE= 10V MIN MAX UNIT 150 V 100 V 6 V 0.8 V 0.2 mA 15 NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information con.