of Changes 、 :200910C 5/5 .
z High breakdown voltage z High current capability z High switching speed z High reliability z RoHS product ORDER MESSAGE Order codes 3DD5027-O-Z-N-C D5027 Halogen Free NO Marking Package TO-220 Packaging Bag www.DataSheet4U.com :200910C 1/5 R 3DD5027 ABSOLUTE RATINGS (Tc=25℃) Parameter Symbol VCEO VEBO IC ICP IB IBP PC Tj Tstg Value 1100 800 7 3 6 1 2 50 150 -55~+150 Unit V V V A A A A W ℃ ℃ — — — Collector- Emitter Voltage(VBE=0) VCES Collector- Emitter Voltage(IB=0) Emitter-Base Voltage Collector Current(DC) Collector Current(pulse) Base Current(DC) Ba.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 3DD5023 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor | |
2 | 3DD5023 |
JILIN SINO-MICROELECTRONICS |
CASE-RATED BIPOLAR TRANSISTOR | |
3 | 3DD5023P |
JILIN SINO |
CASE-RATED BIPOLAR TRANSISTOR | |
4 | 3DD5024 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor | |
5 | 3DD5024 |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
6 | 3DD5024 |
JILIN SINO-MICROELECTRONICS |
CASE-RATED BIPOLAR TRANSISTOR | |
7 | 3DD5024A |
JILIN SINO-MICROELECTRONICS |
CASE-RATED BIPOLAR TRANSISTOR | |
8 | 3DD5024P |
JILIN SINO |
CASE-RATED BIPOLAR TRANSISTOR | |
9 | 3DD5027A |
JILIN SINO-MICROELECTRONICS |
CASE-RATED BIPOLAR TRANSISTOR | |
10 | 3DD5011 |
JILIN SINO-MICROELECTRONICS |
CASE-RATED BIPOLAR TRANSISTOR | |
11 | 3DD5011A9 |
Huajing Microelectronics |
Silicon NPN Bipolar Transistor | |
12 | 3DD5011AH |
Huajing Microelectronics |
Silicon NPN Bipolar Transistor |