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3DD5024P - JILIN SINO

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3DD5024P CASE-RATED BIPOLAR TRANSISTOR

of Changes :201412A 5/5 .

Features

z 3DD5024PNPN z 3DD5024P is high breakdown , voltage of NPN bipolar : transistor.The main process of 、 manufacture:high voltage planar , process,triple diffused process 。(RoHS)。 etc.,adoption of fully plastic packge.RoHS product. EQUIVALENT CIRCUIT RBE=50Ω(Typ.) ORDER MESSAGE Order codes Marking 3DD5024P-O-HF-N-B D5024 Halogen Free Package TO-220HF Packaging Tube Device Weight -- :201412A 1/5 R ABSOLUTE RATINGS (Tc=25℃) Parameter Symbol — Collector−Base Voltage BVCBO — Collector−Emitter Voltage BVCEO — Emitter−Base Voltage BVEBO Collector Current .

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