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The 30H10K uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 5V. This device is suitable for use as a wide variety of applications. Features ● VDS = 30V,ID =100A RDS(ON) < 4.2mΩ @ VGS =10V RDS(ON) < 7mΩ @ VGS =5V ● High Power and current handing capability ● Lead free product is acquired.
● VDS = 30V,ID =100A RDS(ON) < 4.2mΩ @ VGS =10V RDS(ON) < 7mΩ @ VGS =5V
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package
Application
● PWM applications
● Load switch
● Power management
100% UIS TESTED! 100% ΔVds TESTED!
Package Marking and Ordering Information
Device Marking
Device
Device Package
30H10K
30H10K
TO-252
Schematic Diagram 30H10K
Marking and pin Assignment
TO-252(DPAK) top view
Reel Size 325mm
Tape width 16mm
Quantity 2500
Table 1. Absolute Maximum Ratings (TA=25℃)
Symbol
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30H10K - TGD
The TGD30H10K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be us.
30H10K - ROUM
These N-channel Enhanced VDMOSFETs Used advanced trench technology design, provided excellent RDSON and low gate charge..
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 30H10I |
ROUM |
100A 30V N-channel Enhancement Mode Power MOSFET |
|
| 2 | 30H150 |
FNK |
N-Channel MOSFET |
|
| 3 | 30H80 |
FNK |
N-Channel Enhancement Mode MOSFET |
|
| 4 | 30H80A |
FNK |
N-Channel Enhancement Mode MOSFET |
|
| 5 | 30HC |
Semtech |
Silicon Epitaxial Planar Zener Diodes |
|
| 6 | 30HCA |
Semtech |
Silicon Epitaxial Planar Zener Diodes |
|
| 7 | 30HCB |
Semtech |
Silicon Epitaxial Planar Zener Diodes |
|
| 8 | 30HCC |
Semtech |
Silicon Epitaxial Planar Zener Diodes |
|
| 9 | 30HCD |
Semtech |
Silicon Epitaxial Planar Zener Diodes |
|
| 10 | 30HS |
SEMTECH |
Silicon Epitaxial Planar Zener Diodes |
|
| 11 | 30HSA |
SEMTECH |
Silicon Epitaxial Planar Zener Diodes |
|
| 12 | 30HSB |
SEMTECH |
Silicon Epitaxial Planar Zener Diodes |
|