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30H10K |
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| Part Number | 30H10K |
| Manufacturer | ROUM |
| Description | These N-channel Enhanced VDMOSFETs Used advanced trench technology design, provided excellent RDSON and low gate charge. Which accords with the RoHS standard. 2 Features ● Fast Switching ● Low ON Resi... |
| Features |
● Fast Switching ● Low ON Resistance(Rdson≤5.5mΩ) ● Low Gate Charge(Typical:43nC) ● Low Reverse Transfer Capacitance(Typical:215pF) ● 100% Single Pulse Avalanche Energy Test ● 100% ΔVDS Test 3 Applications ● Power switching applications ● Inverter management system ● Electric Tools ● Automotive Electronics VDSS = 30V RDS(on) （TYP)= 4mΩ ID = 100A TO-252B TO-251B 4 Electrical Characteristics 4.1 Absolute Maximum Rating(Tc=25℃,unless otherwise noted) Parameter Symbol Maximum Drian-Source DC Voltage Maximum Gate-Drain Voltage Drain Current(continuous) Drain Current(Pulsed)(Note 1) Single... |
| Document |
 30H10K Data Sheet
PDF 847.66KB |
| Distributor | Stock | Price | Buy |
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