2SK766 - Inchange Semiconductor

2SK766 N-Channel MOSFET Transistor

·Drain Current –ID=3A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUT.

Features

AL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 1mA VGS(th) Gate Threshold Voltage VDS=25 V; ID=1mA RDS(on) Drain-Source On-stage Resistance VGS=10V; ID= 2A IGSS Gate Source Leakage Current VGS= ±20V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=400V; VGS= 0 2SK766 MIN TYP MAX UNIT 500 V 1.0 5.0 V 2.4 3.6 Ω ±1 uA 100 uA NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the a.