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·Drain Current –ID= 10A@ TC=25℃ ·Drain Source Voltage- : VDSS= 450V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOL.
CTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10mA VGS(th) Gate Threshold Voltage VDS=25 V; ID=1mA RDS(on) Drain-Source On-stage Resistance VGS=10V; ID= 5A IGSS Gate Source Leakage Current VGS= ±20V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=320V; VGS= 0 VSD Diode Forward Voltage IF=10A; VGS=0 2SK765A MIN TYP MAX UNIT 450 V 1.0 5.0 V 0.5 0.75 Ω ±1 uA 100 uA 1.2 V NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The informati.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SK765 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 2 | 2SK765 |
Panasonic |
Power F-MOS FET |
|
| 3 | 2SK762 |
Panasonic Semiconductor |
Silicon N-channel Power F-MOS FET |
|
| 4 | 2SK762 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 5 | 2SK762A |
Panasonic Semiconductor |
Silicon N-channel Power F-MOS FET |
|
| 6 | 2SK763 |
INCHANGE |
N-Channel MOSFET |
|
| 7 | 2SK764 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 8 | 2SK764A |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 9 | 2SK766 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 10 | 2SK766 |
Panasonic |
Silicon N-channel Power F-MOS FET |
|
| 11 | 2SK767 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 12 | 2SK768 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
