2SK615 - Panasonic Semiconductor

2SK615 Silicon N-Channel MOSFET

Silicon MOS FETs (Small Signal) 2SK0615 (2SK615) Silicon N-Channel MOS FET For switching Unit: mm I Features 2.0±0.2 G Low ON-resistance G High-speed switching G Allowing to be driven directly by CMOS and TTL G M type package, allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 6.9±0.1 (0.4) 2.5±0.1 .

Features

2.0±0.2 G Low ON-resistance G High-speed switching G Allowing to be driven directly by CMOS and TTL G M type package, allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 6.9±0.1 (0.4) 2.5±0.1 (1.0) (1.0) 3.5±0.1 2.4±0.2 (1.5) (1.5) R 0.9 R 0.7 I Absolute Maximum Ratings (Ta = 25°C) Parameter Drain to Source voltage Gate to Source voltage Drain current Max drain current Allowable power dissipation Channel temperature Storage temperature
* Symbol VDS VGSO ID IDP PD
* Tch Tstg Ratings 80 20 ±0.5 ±1 1 150 −55 to +150 Unit V V A A W °C .