·High Voltage. ·High speed power switching. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous PD Total Dissipation @TC=25℃ TJ Max. Operating Junction Temperature Tstg Storage Temperature VALUE UNIT 400 V ±20 V 3 A 80 W 150 ℃ -55~150 ℃ 2SK610 .
·Drain Current
–ID=3A@ TC=25℃
·Drain Source Voltage-
: VDSS= 400V(Min)
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION
·High Voltage.
·High speed power switching.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDSS
Drain-Source Voltage
VGS
Gate-Source Voltage-Continuous
ID
Drain Current-Continuous
PD
Total Dissipation @TC=25℃
TJ
Max. Operating Junction Temperature
Tstg
Storage Temperature
VALUE UNIT
400
V
±20
V
3
A
80
W
150
℃
-55~150 ℃
2SK610
isc website:www.iscsemi.com
1 isc & iscsemi is re.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK61 |
ETC |
Silicon N-Channel Junction FET | |
2 | 2SK611 |
NEC |
MOS FIELD EFFECT POWER TRANSISTOR | |
3 | 2SK612 |
NEC |
MOS Field Effect Power Transistors | |
4 | 2SK612 |
ETC |
MOS Field Effect Power Transistors | |
5 | 2SK612-Z |
NEC |
MOS Field Effect Power Transistors | |
6 | 2SK612-Z |
ETC |
MOS Field Effect Power Transistors | |
7 | 2SK613 |
Sony |
Silicon N-Channel Junction FET | |
8 | 2SK614 |
Panasonic Semiconductor |
N-Channel MOSFET | |
9 | 2SK614 |
Panasonic Semiconductor |
Silicon N-Channel MOSFET | |
10 | 2SK615 |
Panasonic Semiconductor |
N-Channel MOSFET | |
11 | 2SK615 |
Panasonic Semiconductor |
Silicon N-Channel MOSFET | |
12 | 2SK616 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |