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2SK610 - Inchange Semiconductor

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2SK610 N-Channel MOSFET Transistor

·High Voltage. ·High speed power switching. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous PD Total Dissipation @TC=25℃ TJ Max. Operating Junction Temperature Tstg Storage Temperature VALUE UNIT 400 V ±20 V 3 A 80 W 150 ℃ -55~150 ℃ 2SK610 .

Features


·Drain Current
  –ID=3A@ TC=25℃
·Drain Source Voltage- : VDSS= 400V(Min)
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION
·High Voltage.
·High speed power switching. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous PD Total Dissipation @TC=25℃ TJ Max. Operating Junction Temperature Tstg Storage Temperature VALUE UNIT 400 V ±20 V 3 A 80 W 150 ℃ -55~150 ℃ 2SK610 isc website:www.iscsemi.com 1 isc & iscsemi is re.

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