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Ordering number:EN2550 N-Channel Enhancement MOS Silicon FET 2SK536 Analog Switch Applications Features · Large yfs. · Enhancement type. · Low ON-state resistance. Package Dimensions unit:mm 2024B [2SK536] 0.4 3 0.16 0 to 0.1 0.5 1.5 0.5 2.5 1 0.95 0.95 2 1.9 2.9 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Vo.
· Large yfs.
· Enhancement type.
· Low ON-state resistance.
Package Dimensions
unit:mm 2024B
[2SK536]
0.4 3
0.16
0 to 0.1
0.5 1.5 0.5 2.5
1 0.95 0.95 2 1.9 2.9
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current Drain Current(Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature
Symbol
VDS VGS
ID IDP PD Tch
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
Parameter
Drain-to-Source Breakdown Voltage Gate-to-Source Leakage Current Zero-Gate Voltage Drain Current Cutoff Voltage For.
2SK536 - ON Semiconductor
Ordering number : EN2550B 2SK536 N-Channel MOSFET 50V, 100mA, Single CP http://onsemi.com Features • Large | yfs | • .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SK530 |
INCHANGE |
N-Channel MOSFET Transistor |
|
| 2 | 2SK531 |
INCHANGE |
N-Channel MOSFET Transistor |
|
| 3 | 2SK532 |
ETC |
Transistor |
|
| 4 | 2SK532 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 5 | 2SK534 |
INCHANGE |
N-Channel MOSFET Transistor |
|
| 6 | 2SK534 |
Hitachi Semiconductor |
N-Channel MOSFET |
|
| 7 | 2SK537 |
Toshiba |
MOSFET |
|
| 8 | 2SK538 |
INCHANGE |
N-Channel MOSFET Transistor |
|
| 9 | 2SK539 |
Toshiba Semiconductor |
Transistor |
|
| 10 | 2SK539 |
INCHANGE |
N-Channel MOSFET Transistor |
|
| 11 | 2SK508 |
NEC |
N-Channel MOSFET |
|
| 12 | 2SK508 |
Unisonic Technologies |
N-CHANNEL JFET |
|