2SK531 - INCHANGE

2SK531 N-Channel MOSFET Transistor

·Drain Current –ID=5A@ TC=25℃ ·Drain Source Voltage- : VDSS=450V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and s.

Features

Voltage VDS= 10V; ID= 1mA RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID=3A VDS(ON) Drain-Source Saturation Voltage IF= 8A; VGS=10V IGSS Gate Source Leakage Current VGS= ±20V; VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=450V; VGS= 0 2SK531 MIN TYP. MAX UNIT 450 V 1.5 3.5 V 1.1 1.6 Ω 12 22 V ±100 nA 1 mA NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in .