·Drain Current –ID=2A@ TC=25℃ ·Drain Source Voltage- : VDSS=400V(Min) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers. ABSO.
1mA RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID=1A VDS(ON) Drain-Source Saturation Voltage IF= 1A; VGS=10V IGSS Gate Source Leakage Current VGS= ±20V; VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=400V; VGS= 0 2SK528 MIN TYP. MAX UNIT 400 V 1.5 3.5 V 2.2 Ω 10 13 V ±1 uA 1 mA NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment..
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK521 |
Hitachi |
Silicon N-Channel FET | |
2 | 2SK522 |
Hitachi Semiconductor |
N-Channel MOSFET | |
3 | 2SK525 |
Toshiba Semiconductor |
Silicon P-Channel MOSFET | |
4 | 2SK525 |
INCHANGE |
N-Channel MOSFET Transistor | |
5 | 2SK526 |
Toshiba Semiconductor |
N-Channel MOSFET | |
6 | 2SK526 |
INCHANGE |
N-Channel MOSFET Transistor | |
7 | 2SK529 |
Toshiba |
Transistor | |
8 | 2SK529 |
INCHANGE |
N-Channel MOSFET Transistor | |
9 | 2SK508 |
NEC |
N-Channel MOSFET | |
10 | 2SK508 |
Unisonic Technologies |
N-CHANNEL JFET | |
11 | 2SK511 |
Hitachi Semiconductor |
N-Channel MOSFET | |
12 | 2SK512 |
Hitachi |
N-Channel MOSFET |