2SK525 - INCHANGE

2SK525 N-Channel MOSFET Transistor

·Drain Current –ID=10A@ TC=25℃ ·Drain Source Voltage- : VDSS=150V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed especially for low voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and so.

Features

FET Transistor
·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10mA VGS(TH) Gate Threshold Voltage VDS= 10V; ID= 1mA RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID=5A VDS(ON) Drain-Source Saturation Voltage IF= 10A; VGS=10V IGSS Gate Source Leakage Current VGS= ±20V; VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=150V; VGS= 0 2SK525 MIN TYP. MAX UNIT 150 V 1.5 3.5 V 0.2 0.28 Ω 2.2 3.0 V ±100 nA 1 mA NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any.