2SK419 - Toshiba

2SK419 Silicon N-Channel MOSFET

: SILICON N CHANNEL MPS TYPE (7T-MOS) HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS. SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm 10. 3 MAX. FEATURES . High Brakdwon Voltage : V(br)dss=450V . High Forward Transfer Admittance : |Yf s |=1.2S (Typ.) . Low Leakage Current : lGSS =:t100nA(Max. ) @ Vg.

Features

. High Brakdwon Voltage : V(br)dss=450V . High Forward Transfer Admittance : |Yf s |=1.2S (Typ.) . Low Leakage Current : lGSS =:t100nA(Max. ) @ Vgs=±20V . Enhancement-Mode lDSS=lmA(Max.) @ VDS=450V : V t h=l
• 5 ~ 3. 5V @ lD=lmA MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Drain-Source Voltage VDSX 450 Gate-Source Voltage vgss ±20 Drain Current DC Pulse Drain Power Dissipation (Tc=25°C) Channel Temperature Storage Temperature Range ID idp Pd Teh [stg_ ELECTRICAL CHARACTERISTICS (Ta=25°C) CHARACTERISTIC SYMBOL 50 150 -55-150 1. GATE 2. DRAIN (HEAT SINK) a .