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2SK4106 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK4106 Switching Regulator Applications Unit: mm • • • • Low drain-source ON resistance: RDS (ON) = 0.4 Ω (typ.) High forward transfer admittance: |Yfs| = 8.5 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 500 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 m.
/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Thermal resistance, channel to case Thermal re.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SK410 |
Hitachi Semiconductor |
N-Channel MOSFET |
|
| 2 | 2SK4100LS |
Sanyo Semicon Device |
N-Channel Silicon MOSFET |
|
| 3 | 2SK4100LS |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 4 | 2SK4100LS |
ON Semiconductor |
N-Channel Silicon MOSFET |
|
| 5 | 2SK4101FG |
Sanyo |
N-Channel MOSFET |
|
| 6 | 2SK4101FS |
Sanyo |
N-Channel MOSFET |
|
| 7 | 2SK4101LS |
Sanyo Semicon Device |
N-Channel Silicon MOSFET |
|
| 8 | 2SK4101LS |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 9 | 2SK4101LS |
ON Semiconductor |
N-Channel Silicon MOSFET |
|
| 10 | 2SK4107 |
Toshiba Semiconductor |
N-Channel MOSFET |
|
| 11 | 2SK4108 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |
|
| 12 | 2SK4108 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|