2SK4151 - Renesas Technology

2SK4151 N-Channel MOSFET

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Features

 Capable of 2.5 V gate drive
 Low drive current
 Low on-resistance RDS(on) = 1.5  typ. (at ID = 0.5 A, VGS = 4 V, Ta = 25°C) REJ03G1901-0100 Rev.1.00 Mar 15, 2010 Outline RENESAS Package code: PRSS0003DA-A (Package name: TO-92(1)) '
* 32 6RXUFH 'UDLQ 
*DWH 6 1 3B Absolute Maximum Ratings (Ta = 25°C) Symbol VDSS VGSS ID Note1 ID (pulse) Note1 IDR Note2 IDR (pulse) Note2 Pch ch-a Tch Tstg Note2 Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Channel dissipa.