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Capable of 2.5 V gate drive
Low drive current
Low on-resistance RDS(on) = 4.0 typ. (at ID = 0.2 A, VGS = 4 V, Ta = 25°C) REJ03G1909-0300 Rev.3.00 May 27, 2010
Outline
RENESAS Package code: PRSS0003DA-A (Package name: TO-92(1))
D
G 3 2
1. Source 2. Drain 3. Gate
1 S
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Channel dissipation Channel to ambient thermal impedance Channel temperature Storage temperature Notes: 1. PW 10 .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK415 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
2 | 2SK415 |
Hitachi Semiconductor |
HIGH SPEED POWER SWITCHING | |
3 | 2SK4151 |
Renesas Technology |
N-Channel MOSFET | |
4 | 2SK410 |
Hitachi Semiconductor |
N-Channel MOSFET | |
5 | 2SK4100LS |
Sanyo Semicon Device |
N-Channel Silicon MOSFET | |
6 | 2SK4100LS |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
7 | 2SK4100LS |
ON Semiconductor |
N-Channel Silicon MOSFET | |
8 | 2SK4101FG |
Sanyo |
N-Channel MOSFET | |
9 | 2SK4101FS |
Sanyo |
N-Channel MOSFET | |
10 | 2SK4101LS |
Sanyo Semicon Device |
N-Channel Silicon MOSFET | |
11 | 2SK4101LS |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
12 | 2SK4101LS |
ON Semiconductor |
N-Channel Silicon MOSFET |