The 2SK4027 is suitable for converter of ECM. PACKAGE DRAWING (Unit: mm) 0.4 +0.1 –0.05 0.16 –0.06 +0.1 • High gain −1.0 dB (VDD = 2.0 V, C = 5 pF, RL = 2.2 kΩ) • Low noise −115 dB (VDD = 2.0 V, C = 5 pF, RL = 2.2 kΩ) 2.0 MIN. FEATURES Marking 3 1.5 2 2.0 MIN. 1 ORDERING INFORMATION PART NUMBER 2SK4027 PACKAGE SC-59 (Straight) 0.95 0.95 0.8 ±0.1 .
Marking
3
1.5
2
2.0 MIN.
1
ORDERING INFORMATION
PART NUMBER 2SK4027 PACKAGE SC-59 (Straight)
0.95
0.95
0.8 ±0.1 1.1 +0.2
–0.1
1.9 ±0.2 2.9 ±0.2
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = −1.0 V) Gate to Drain Voltage Drain Current Gate Current Total Power Dissipation Junction Temperature Storage Temperature VDSX VGDO ID IG PT Tj Tstg 20 −20 10 10 200 125 −55 to +125 V V mA mA mW °C °C
1: Source 2: Drain 3: Gate 1 3
EQUIVALENT CIRCUIT
2
Caution Please take care of ESD (Electro Static Discharge) when you handle the device in this document.
The information in.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK402 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
2 | 2SK4020 |
Toshiba Semiconductor |
N-Channel MOSFET | |
3 | 2SK4021 |
Toshiba Semiconductor |
N-Channel MOSFET | |
4 | 2SK4022 |
Toshiba Semiconductor |
N-Channel MOSFET | |
5 | 2SK4023 |
Toshiba Semiconductor |
N-Channel MOSFET | |
6 | 2SK4026 |
Toshiba Semiconductor |
N-Channel MOSFET | |
7 | 2SK4028 |
NEC |
N-Channel MOSFET | |
8 | 2SK400 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
9 | 2SK4002 |
Toshiba Semiconductor |
N-Channel MOSFET | |
10 | 2SK4003 |
Toshiba Semiconductor |
N-Channel MOSFET | |
11 | 2SK4004-01MR |
Fuji |
Power MOSFET | |
12 | 2SK4005-01MR |
Fuji Electric |
Power MOSFET |