·Drain Current –ID=8A@ TC=25℃ ·Drain Source Voltage- : VDSS= 400V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High speed switching. ·High Cutoff frequency. ·No secondary breakdown. ·Suitable for switching regulator,DC-DC converter, RF amplifiers,and ultra.
reshold Voltage VDS= 10V; ID= 1mA RDS(ON) Drain-Source On-stage Resistance VGS= 15V; ID= 4A VSD Diode Forward Voltage IF= 4A; VGS= 0 IGSS Gate Source Leakage Current VGS= ±20V; VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=320V; VGS= 0 2SK402 MIN TYP. MAX UNIT 400 V 2.0 5.0 V 1.10 1.75 Ω 0.85 V ±1 uA 1 mA NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK400 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
2 | 2SK4002 |
Toshiba Semiconductor |
N-Channel MOSFET | |
3 | 2SK4003 |
Toshiba Semiconductor |
N-Channel MOSFET | |
4 | 2SK4004-01MR |
Fuji |
Power MOSFET | |
5 | 2SK4005-01MR |
Fuji Electric |
Power MOSFET | |
6 | 2SK4012 |
Toshiba Semiconductor |
N-Channel MOSFET | |
7 | 2SK4013 |
Toshiba Semiconductor |
N-Channel MOSFET | |
8 | 2SK4013 |
INCHANGE |
N-Channel MOSFET | |
9 | 2SK4014 |
Toshiba Semiconductor |
N-Channel MOSFET | |
10 | 2SK4014 |
INCHANGE |
N-Channel MOSFET | |
11 | 2SK4015 |
Toshiba Semiconductor |
N-Channel MOSFET | |
12 | 2SK4016 |
Toshiba Semiconductor |
N-Channel MOSFET |