·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 500 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 52 A IDM Drain Current-Single Pluse 200 A PD Total Dissipation @TC=25℃ 600 W TJ Max. Opera.
·Static Drain-Source On-Resistance
: RDS(on) = 0.11Ω(Max)
·Fast Switching
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION
·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage
500
V
VGS
Gate-Source Voltage-Continuous
±30
V
ID
Drain Current-Continuous
52
A
IDM
Drain Current-Single Pluse
200
A
PD
Total Dissipation @TC=25℃
600
W
TJ
Max. Operating Junction Temperature
150
℃
Tstg
Stora.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK368 |
Toshiba Semiconductor |
N-Channel MOSFET | |
2 | 2SK3680-01 |
Fuji Electric |
N-CHANNEL SILICON POWER MOSFET | |
3 | 2SK3681 |
INCHANGE |
N-Channel MOSFET | |
4 | 2SK3681-01 |
Fuji Electric |
N-CHANNEL SILICON POWER MOSFET | |
5 | 2SK3681-01 |
INCHANGE |
N-Channel MOSFET | |
6 | 2SK3682-01 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
7 | 2SK3682-01 |
Fuji Electric |
N-CHANNEL SILICON POWER MOSFET | |
8 | 2SK3683-01MR |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
9 | 2SK3683-01MR |
Fuji Electric |
N-CHANNEL SILICON POWER MOSFET | |
10 | 2SK3684-01L |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
11 | 2SK3684-01L |
Fuji Electric |
N-CHANNEL SILICON POWER MOSFET | |
12 | 2SK3684-01S |
Inchange Semiconductor |
N-Channel MOSFET Transistor |