2SK368 - Toshiba Semiconductor

2SK368 N-Channel MOSFET

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK368 Audio Frequency and High Voltage Amplifier Applications Constant Current Applications 2SK368 Unit: mm · High breakdown voltage: VGDS = −100 V (min) · High input impedance: IGSS = −1.0 nA (max) (VGS = −80 V) · Small package Maximum Ratings (Ta = 25°C) Characteristics Gate-drain voltage.

Features

= 0.1 mA VDS = 10 V, VGS = 0, f = 1 kHz VDS = 10 V, VGS = 0, f = 1 MHz VDG = 10 V, ID = 0, f = 1 MHz VDS = 10 V, VGS = 0 RG = 100 kW, f = 100 Hz Note: IDSS classification O: 0.6~1.4 mA, Y: 1.2~3.0 mA, GR (G): 2.6~6.5 mA Marking Min Typ. Max Unit ¾ ¾ -1.0 nA -100 ¾ ¾ V 0.6 ¾ 6.5 mA -0.4 ¾ -3.5 V 1.5 4.6 ¾ mS ¾ 13 ¾ pF ¾ 3 ¾ pF ¾ 0.5 ¾ dB 1 2003-03-26 2SK368 2 2003-03-26 2SK368 3 2003-03-26 2SK368 RESTRICTIONS ON PRODUCT USE 000707EAA
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