·motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 900 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 7.0 A IDM Drain Current-Single Pluse 28 A PD Total Dissipation @TC=25℃ 195 W TJ Max. Operating Junction Tem.
·Drain Current : ID= 7.0A@ TC=25℃
·Drain Source Voltage
: VDSS= 900V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 2.0Ω(Max) @ VGS= 10V
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION
·motor drive, DC-DC converter, power switch
and solenoid drive.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
900
V
VGS
Gate-Source Voltage-Continuous
±30
V
ID
Drain Current-Continuous
7.0
A
IDM
Drain Current-Single Pluse
28
A
PD
Total Dissipation @TC=25℃
195
W
TJ
Max. .
2SK3675-01 FUJI POWER MOSFET 200401 N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Super FAP-G Series Features H.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK367 |
Toshiba Semiconductor |
N-Channel MOSFET | |
2 | 2SK3670 |
Toshiba Semiconductor |
Silicon N-Channel MOS Type Field Effect Transistor | |
3 | 2SK3673-01MR |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
4 | 2SK3673-01MR |
Fuji Electric |
N-CHANNEL SILICON POWER MOSFET | |
5 | 2SK3674-01JS |
Fuji Electric |
Power MOSFET | |
6 | 2SK3674-01L |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
7 | 2SK3674-01L |
Fuji Electric |
Power MOSFET | |
8 | 2SK3674-01S |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
9 | 2SK3674-01S |
Fuji Electric |
Power MOSFET | |
10 | 2SK3674-01SJ |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
11 | 2SK3676-01L |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
12 | 2SK3676-01L |
Fuji Electric |
N-CHANNEL SILICON POWER MOSFET |