2SK3674-01JS - Fuji Electric

2SK3674-01JS Power MOSFET

2SK3674-01L,S,SJ (900V/2.0Ω/7A) 1) Package T-PACK L •E•E•ESee Page 2/4 S •E•E•ESee Page 3/4 SJ •E•E•ESee Page 4/4 PRELIMINARY 2) Absolute Maximum Ratings (Tc=25• Ž • @ Items Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage www.DataSheet4U.com Repetitive and Non-Repetitive Maximum Avalanche Current Non-Repetitive Maximu.

Features

Temperature range 3)Electrical Characteristics (Tch=25
•Ž unless otherwise specified) min. 900 3.0 --------------------7 --typ. ------------980 120 6 28 9 8 --1.0 max. --5.0 50 500 100 2.0 --------------1.5 Units V V µA µA nA Ω pF Items Symbols Test Conditions ID=250uA VGS=0V Drain-Source Breakdown Voltage BVDSS ID=250uA VDS=VGS VGS(th) Gate Threshold Voltage VDS=900V Tch=25 Zero Gate Voltage Drain Current IDSS VGS=0V Tch=125 VGS=±30V VDS=0V IGSS Gate-Source Leakage Current Drain-Source On-State Resistance RDS(on) Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate C.