2SK3215 - Hitachi Semiconductor

2SK3215 N-Channel MOSFET

2SK3215 Silicon N Channel MOS FET High Speed Power Switching ADE-208-764(Z) Target Specification 1st. Edition December 1998 Features • Low on-resistance R DS =350mΩ typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline TO–220AB D G 1 2 S 3 1. Gate 2. Drain(Flange) 3. Source 2SK3215 Absolute Maximum Ratings (Ta = 25°C).

Features

• Low on-resistance R DS =350mΩ typ.
• High speed switching
• 4V gate drive device can be driven from 5V source Outline TO
  –220AB D G 1 2 S 3 1. Gate 2. Drain(Flange) 3. Source 2SK3215 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP Note3 Note3 Note2 Note1 Ratings 200 ±20 8 32 8 8 4.2 40 150
  –55 to +150 Unit V V A A A A mJ W °C °C EAR .