2SK3161(L), 2SK3161(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-734A (Z) 2nd. Edition February 1999 Features • Low on-resistance R DS = 90 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline LDPAK 4 4 D 1 1 2 3 G 2 3 1. Gate 2. Drain 3. Source 4. Drain S 2SK3161(L),2SK3161(S) Absolute M.
• Low on-resistance R DS = 90 mΩ typ.
• High speed switching
• 4 V gate drive device can be driven from 5 V source
Outline
LDPAK
4 4
D
1 1
2
3
G
2
3
1. Gate 2. Drain 3. Source 4. Drain
S
2SK3161(L),2SK3161(S)
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP
Note3 Note3 Note2 Note1
Ratings 200 ±20 15 60 15 15 15 75 150
–55 to +150
U.
2SK3161(L), 2SK3161(S) Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS =90 mΩ typ..
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK3161 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
2 | 2SK3161 |
Renesas |
N-Channel MOSFET | |
3 | 2SK3161S |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
4 | 2SK3161S |
Renesas |
N-Channel MOSFET | |
5 | 2SK316 |
Panasonic Semiconductor |
N-Channel MOSFET | |
6 | 2SK3160 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
7 | 2SK3160 |
Renesas |
N-Channel MOSFET | |
8 | 2SK3162 |
Hitachi Semiconductor |
N-Channel MOSFET | |
9 | 2SK3162 |
Renesas |
N-Channel MOSFET | |
10 | 2SK3163 |
Hitachi Semiconductor |
N-Channel MOSFET | |
11 | 2SK3163 |
Renesas |
N-Channel MOSFET | |
12 | 2SK310 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |