2SK3161(L), 2SK3161(S) Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS =90 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline REJ03G1086-0300 (Previous: ADE-208-734A) Rev.3.00 Sep 07, 2005 RENESAS Package code: PRSS0004AE-A (Package name: LDPAK(L)) 4 RENESAS Package code: PRSS.
• Low on-resistance RDS =90 mΩ typ.
• High speed switching
• 4 V gate drive device can be driven from 5 V source
Outline
REJ03G1086-0300 (Previous: ADE-208-734A)
Rev.3.00 Sep 07, 2005
RENESAS Package code: PRSS0004AE-A (Package name: LDPAK(L))
4
RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1))
D 4
G
12 3
123
S
1. Gate 2. Drain 3. Source 4. Drain
Rev.3.00 Sep 07, 2005 page 1 of 8
2SK3161
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy C.
2SK3161(L), 2SK3161(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-734A (Z) 2nd. Edition February 1999.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK316 |
Panasonic Semiconductor |
N-Channel MOSFET | |
2 | 2SK3160 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
3 | 2SK3160 |
Renesas |
N-Channel MOSFET | |
4 | 2SK3161L |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
5 | 2SK3161L |
Renesas |
N-Channel MOSFET | |
6 | 2SK3161S |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
7 | 2SK3161S |
Renesas |
N-Channel MOSFET | |
8 | 2SK3162 |
Hitachi Semiconductor |
N-Channel MOSFET | |
9 | 2SK3162 |
Renesas |
N-Channel MOSFET | |
10 | 2SK3163 |
Hitachi Semiconductor |
N-Channel MOSFET | |
11 | 2SK3163 |
Renesas |
N-Channel MOSFET | |
12 | 2SK310 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |