2SK3017 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII) 2SK3017 DC−DC Converter, Relay Drive and Motor Drive Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 1.05 Ω (typ.) z High forward transfer admittance : |Yfs| = 7.0 S (typ.) z Low leakage current : IDSS = 100 μA (max) (VDS = 720 V) z Enhancement mode : Vt.
(e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Sy.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK301 |
Panasonic Semiconductor |
N-Channel MOSFET | |
2 | 2SK3012 |
Shindengen Electric Mfg.Co.Ltd |
VX-2 Series Power MOSFET | |
3 | 2SK3013 |
Shindengen Electric Mfg.Co.Ltd |
VX-2 Series Power MOSFET | |
4 | 2SK3018 |
Rohm |
2.5V Drive Nch MOS FET | |
5 | 2SK3018 |
JCET |
N-Channel MOSFET | |
6 | 2SK3018 |
BLUE ROCKET ELECTRONICS |
N-CHANNEL MOSFET | |
7 | 2SK3018 |
MCC |
N-Channel Enhancement Mode Field Effect Transistor | |
8 | 2SK3018 |
GME |
N-Channel Enhancement Mode Field Effect Transistor | |
9 | 2SK3018 |
Kexin |
N-Channel MOSFET | |
10 | 2SK3018 |
JinYu |
N-Channel Enhancement Mode MOSFET | |
11 | 2SK3018S3 |
CYStech |
ESD protected N-Channel Enhancement Mode MOSFET | |
12 | 2SK3018W |
BLUE ROCKET ELECTRONICS |
N-CHANNEL MOSFET |