2SK2909 - Sanyo Semicon Device

2SK2909 N-Channel Silicon MOSFET

Ordering number:ENN6312 N-Channel Silicon MOSFET 2SK2909 Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed switching. · 2.5V drive. Package Dimensions unit:mm 2091A [2SK2909] 0.5 0.4 3 0.16 0 to 0.1 0.5 1 0.95 0.95 2 1.9 2.9 1.5 2.5 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source V.

Features

· Low ON resistance.
· Ultrahigh-speed switching.
· 2.5V drive. Package Dimensions unit:mm 2091A [2SK2909] 0.5 0.4 3 0.16 0 to 0.1 0.5 1 0.95 0.95 2 1.9 2.9 1.5 2.5 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions 1 : Gate 2 : Source 3 : Drain SANYO : CP 0.8 1.1 Ratings 20 ±10 0.8 3.2 0.25 150
  –55 to +150 Unit V V A A W ˚C ˚C Electrical Characte.