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2SK2906-01 FAP-IIIB Series > Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated N-channel MOS-FET 60V 7,8mΩ ±100A 150W > Outline Drawing > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters > Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25°C), unless other.
High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated N-channel MOS-FET 60V 7,8mΩ ±100A 150W > Outline Drawing > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters > Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25°C), unless otherwise specified Item Drain-Source-Voltage Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Maximum Avalanche Energy Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS ID I D(puls) V GS E AV PD T ch T stg Rating 60 ±100 ±400 ±30 1268.3 150 .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SK2900-01 |
Fuji Electric |
N-channel MOS-FET |
|
| 2 | 2SK2901-01L |
Fuji Electric |
N-CHANNEL SILICON POWER MOS-FET |
|
| 3 | 2SK2901-01S |
Fuji Electric |
N-CHANNEL SILICON POWER MOS-FET |
|
| 4 | 2SK2902-01MR |
Fuji Electric |
N-CHANNEL SILICON POWER MOS-FET |
|
| 5 | 2SK2903-01MR |
Fuji Electric |
N-CHANNEL SILICON POWER MOS-FET |
|
| 6 | 2SK2904-01 |
Fuji Electric |
N-CHANNEL SILICON POWER MOS-FET |
|
| 7 | 2SK2905-01R |
Fuji Electric |
N-CHANNEL SILICON POWER MOS-FET |
|
| 8 | 2SK2907-01 |
Fuji Electric |
N-channel MOS-FET |
|
| 9 | 2SK2907-01R |
Fuji Electric |
N-CHANNEL SILICON POWER MOS-FET |
|
| 10 | 2SK2908-01L |
Fuji Electric |
N-channel MOS-FET |
|
| 11 | 2SK2908-01S |
Fuji Electric |
N-channel MOS-FET |
|
| 12 | 2SK2909 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET |
|