2SK2889 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK2889 Chopper Regulator, DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 0.54 Ω (typ.) z High forward transfer admittance : |Yfs| = 9.0 S (typ.) z Low leakage current : IDSS = 100 μA (max) (VDSS = 600 V) z Enhancement mode : Vth = 2.
the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case Thermal .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK2880 |
Isahaya Electronics |
N-Channel MOSFET | |
2 | 2SK2881 |
Isahaya Electronics |
N-Channel Transistor | |
3 | 2SK2882 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
4 | 2SK2883 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
5 | 2SK2884 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
6 | 2SK2885 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
7 | 2SK2885L |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
8 | 2SK2885S |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
9 | 2SK2886 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
10 | 2SK2886 |
INCHANGE |
N-Channel MOSFET | |
11 | 2SK2887 |
Rohm |
Switching Transistor | |
12 | 2SK2887 |
Guangdong Kexin Industrial |
N-Channel Silicon MOSFET |