2SK2883 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−π−MOSV) 2SK2883 Chopper Regulator, DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 3.0 Ω (typ.) z High forward transfer admittance : |Yfs| = 2.6 S (typ.) z Low leakage current : IDSS = 100 μA (max) (VDS = 640 V) z Enhancement mode : Vth = .
gnificant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case Thermal resistanc.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK2880 |
Isahaya Electronics |
N-Channel MOSFET | |
2 | 2SK2881 |
Isahaya Electronics |
N-Channel Transistor | |
3 | 2SK2882 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
4 | 2SK2884 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
5 | 2SK2885 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
6 | 2SK2885L |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
7 | 2SK2885S |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
8 | 2SK2886 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
9 | 2SK2886 |
INCHANGE |
N-Channel MOSFET | |
10 | 2SK2887 |
Rohm |
Switching Transistor | |
11 | 2SK2887 |
Guangdong Kexin Industrial |
N-Channel Silicon MOSFET | |
12 | 2SK2889 |
Toshiba Semiconductor |
Silicon N Channel MOS Type Field Effect Transistor |