2SK2605 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII) 2SK2605 Switching Regulator Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 1.9 Ω (typ.) z High forward transfer admittance : |Yfs| = 3.8 S (typ.) z Low leakage current : IDSS = 100 μA (max) (VDS = 640 V) z Enhancement mode : Vth = 2.0~4.0 V (VDS = 10 V,.
high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Symbol Max Unit Thermal re.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK260 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
2 | 2SK2601 |
Toshiba Semiconductor |
N-Channel MOSFET | |
3 | 2SK2601 |
INCHANGE |
N-Channel MOSFET | |
4 | 2SK2602 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
5 | 2SK2603 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
6 | 2SK2604 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
7 | 2SK2606 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
8 | 2SK2607 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
9 | 2SK2608 |
Toshiba Semiconductor |
N-Channel MOSFET | |
10 | 2SK2608 |
INCHANGE |
N-Channel MOSFET | |
11 | 2SK2610 |
Toshiba Semiconductor |
N-Channel MOSFET | |
12 | 2SK2611 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |