2SK2602 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK2602 Switching Regulator Applications z Low drain−source ON-resistance : RDS (ON) = 0.9 Ω (typ.) z High forward transfer admittance : |Yfs| = 5.5 S (typ.) z Low leakage current : IDSS = 100 μA (max) (VDS = 600 V) z Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Un.
er heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Cha.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK260 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
2 | 2SK2601 |
Toshiba Semiconductor |
N-Channel MOSFET | |
3 | 2SK2601 |
INCHANGE |
N-Channel MOSFET | |
4 | 2SK2603 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
5 | 2SK2604 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
6 | 2SK2605 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
7 | 2SK2606 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
8 | 2SK2607 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
9 | 2SK2608 |
Toshiba Semiconductor |
N-Channel MOSFET | |
10 | 2SK2608 |
INCHANGE |
N-Channel MOSFET | |
11 | 2SK2610 |
Toshiba Semiconductor |
N-Channel MOSFET | |
12 | 2SK2611 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |