Ordering number:ENN5316A Features · Low ON-resistance. · Ultrahigh-speed switching. · 4V drive. N-Channel Silicon MOSFET 2SK2555 DC/DC Converter Applications Package Dimensions unit:mm 2083B [2SK2555] 6.5 5.0 2.3 4 0.5 5.5 1.5 7.0 unit:mm 2092B 0.85 0.7 0.6 12 3 2.3 2.3 0.8 1.6 7.5 1.2 0.5 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP [2SK2555] 6.
· Low ON-resistance.
· Ultrahigh-speed switching.
· 4V drive.
N-Channel Silicon MOSFET
2SK2555
DC/DC Converter Applications
Package Dimensions
unit:mm 2083B
[2SK2555]
6.5 5.0 2.3 4 0.5
5.5 1.5 7.0
unit:mm 2092B
0.85 0.7
0.6 12 3
2.3 2.3
0.8 1.6 7.5
1.2
0.5
1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP
[2SK2555]
6.5 2.3
5.0 0.5 4
0.8 5.5 1.5
2.5 7.0 1.2
0.85 1
0.6
2
3
2.3 2.3
0.5
1.2 0 to 0.2
1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP-FA
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extre.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK2550 |
Toshiba Semiconductor |
Silicon N Channel MOS Type Field Effect Transistor | |
2 | 2SK2551 |
Toshiba Semiconductor |
Silicon N Channel MOS Type Field Effect Transistor | |
3 | 2SK2552 |
Renesas |
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR | |
4 | 2SK2552B |
NEC |
N-Channel MOSFET | |
5 | 2SK2552C |
NEC |
MOSFET | |
6 | 2SK2553 |
Hitachi Semiconductor |
N-Channel MOSFET | |
7 | 2SK2553L |
Hitachi Semiconductor |
N-Channel MOSFET | |
8 | 2SK2553S |
Hitachi Semiconductor |
Silicon N Channel MOS FET | |
9 | 2SK2554 |
Hitachi Semiconductor |
Silicon N-Channel MOS FET | |
10 | 2SK2554 |
Renesas |
Silicon N Channel MOS FET | |
11 | 2SK2556 |
Sanyo |
N-Channel Silicon MOSFET | |
12 | 2SK2557 |
Sanyo |
N-Channel Silicon MOSFET |