2SK2552C - NEC

2SK2552C MOSFET

The 2SK2552C contains a diode and high resistivity between its gates and sources, for achieving short stability time during power-on. In addition, because of its compact 1.6 ±0.1 0.8 ±0.1 PACKAGE DRAWING (Unit: mm) 0.3 +0.1 –0 0.15 +0.1 –0.05 package and low noise, the 2SK2552C is especially suitable for compact ECMs for audio or mobile devices such as cel.

Features

• Low noise: −108.5 dB TYP. (VDD = 2.0 V, C = 5 pF, RL = 2.2 kΩ)
• Containing a diode and high resistivity, short stability time is achieved during power-on.
• Small package: SC-75 (USM) 1.0 TYP. 1.6 ±0.1 ORDERING INFORMATION PART NUMBER 2SK2552C PACKAGE SC-75 (USM) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = −1.0 V) Gate to Drain Voltage Drain Current Gate Current Total Power Dissipation Junction Temperature Storage Temperature VDSX VGDO ID IG PT Tj Tstg 20 −20 10 10 100 125 −55 to +125 V V mA mA mW °C °C EQUIVALENT CIRCUIT 2 3 1 1: Source 2: Drain 3: Gate Cautio.