2SK2529 - Hitachi Semiconductor

2SK2529 Silicon N-Channel MOSFET

2SK2529 Silicon N-Channel MOS FET ADE-208-356F 7th. Edition Application High speed power switching Features • • • • Low on-resistance R DS(on) = 7 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline TO-220CFM D G 12 3 1. Gate 2. Drain 3. Source S 2SK2529 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source .

Features

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• Low on-resistance R DS(on) = 7 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline TO-220CFM D G 12 3 1. Gate 2. Drain 3. Source S 2SK2529 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Symbol VDSS VGSS ID I D(pulse)
* I DR I AP
* 3 3 2 1 Rat.