2SK2528-01 FAP-II Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof N-channel MOS-FET 900V 3,6Ω 5A 80W > Outline Drawing > Applications Switching Regulators UPS DC-DC converters General Purpose Power Amplifier > Maximum Ratings and Characteristics - Abso.
High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof N-channel MOS-FET 900V 3,6Ω 5A 80W > Outline Drawing > Applications Switching Regulators UPS DC-DC converters General Purpose Power Amplifier > Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25°C), unless otherwise specified Item Drain-Source-Voltage Drain-Gate-Voltage Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS V DGR ID I D(puls) V GS PD T ch .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK2520-01MR |
Fuji Electric |
N-channel MOS-FET | |
2 | 2SK2521-01 |
Fuji Electric |
N-channel MOS-FET | |
3 | 2SK2522-01MR |
Fuji Electric |
N-channel MOS-FET | |
4 | 2SK2523-01 |
Fuji Electric |
N-channel MOS-FET | |
5 | 2SK2524-01MR |
Fuji Electric |
N-channel MOS-FET | |
6 | 2SK2525-01 |
Fuji Electric |
N-channel MOS-FET | |
7 | 2SK2526-01 |
Fuji Electric |
N-channel MOS-FET | |
8 | 2SK2527-01MR |
Fuji Electric |
N-channel MOS-FET | |
9 | 2SK2529 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
10 | 2SK2529 |
Renesas |
Silicon N-Channel MOSFET | |
11 | 2SK2503 |
Rohm |
Small switching Transistors | |
12 | 2SK2503 |
Guangdong Kexin Industrial |
Silicon N-Channel MOSFET |