The 2SK2415 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. PACKAGE DIMENSIONS (in millimeters) + 0.2 1.5 – 0.1 6.5 ± 0.2 2.3 ± 0.2 0.5 ± 0.1 FEATURES 1.6 ± 0.2 5.0 ± 0.2 4 RDS(on)1 = 0.10 Ω MAX. (@ VGS = 10 V, ID = 4.0 A) RDS(on)2 = 0.15 Ω MAX. (@ VGS = 4 V, ID = 4.0 A) 1 2 3 • Low Ciss Ciss = 570 pF TYP. .
1.6 ± 0.2
5.0 ± 0.2 4
RDS(on)1 = 0.10 Ω MAX. (@ VGS = 10 V, ID = 4.0 A) RDS(on)2 = 0.15 Ω MAX. (@ VGS = 4 V, ID = 4.0 A)
1 2 3
• Low Ciss
Ciss = 570 pF TYP.
1.3 MAX.
QUALITY GRADE
Standard
Please refer to "Quality grade on NEC Semiconductor Devices" (Document number IEI-1209) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications.
2.3 2.3
7.0 MAX. 5.5 ± 0.2 13.7 MIN.
• Low On-Resistance
0.6 ± 0.1
0.6 ± 0.1
1. 2. 3. 4.
Gate Drain Source Fin (Drain)
TO-251 (MP-3)
6.5 ± 0.2
5.0 ± 0.2
+ 0.2 1.5
– 0.1
0.75
ABSOLUTE MA.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK241 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
2 | 2SK2410 |
NEC |
SWITCHING N-CHANNEL POWER MOSFET | |
3 | 2SK2411 |
NEC Electronics |
SWITCHING N-CHANNEL POWER MOSFET | |
4 | 2SK2411-Z |
NEC Electronics |
SWITCHING N-CHANNEL POWER MOSFET | |
5 | 2SK2412 |
NEC |
SWITCHING N-CHANNEL POWER MOSFET | |
6 | 2SK2413 |
NEC |
SWITCHING N-CHANNEL POWER MOSFET | |
7 | 2SK2414 |
NEC |
SWITCHING N-CHANNEL POWER MOSFET | |
8 | 2SK2414 |
Kexin |
MOS Field Effect Transistor | |
9 | 2SK2414-Z |
NEC |
SWITCHING N-CHANNEL POWER MOSFET | |
10 | 2SK2415-Z |
NEC |
SWITCHING N-CHANNEL POWER MOSFET | |
11 | 2SK2417 |
Toshiba Semiconductor |
N-Channel MOSFET | |
12 | 2SK2417 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |