2SK2182 - Inchange Semiconductor

2SK2182 N-Channel MOSFET Transistor

·Drain Current ID= 3A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 500 V VGS Gate-Source Voltage ±30.

Features

GS= 10V; ID= 1.5A IGSS Gate-Body Leakage Current VGS= ±30V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= 500V; VGS= 0 Ciss Input Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance ton Turn-on Time toff Turn-off Time VDS=10V; VGS=0V; fT=1MHz VGS=10V;ID=1.5A; RL=100Ω MIN TYPE MAX UNIT 500 V 2.5 3.0 3.5 V 1.5 V 1.8 2.3 Ω ±100 nA 250 µA 400 30 pF 90 45 80 ns 90 140 NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a g.