2SK2180 - INCHANGE

2SK2180 N-Channel MOSFET

·Drain Current ID= 3A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching power amplifier ·High voltage power supply ·Inverter ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 500 V.

Features

VGS(th) Gate Threshold Voltage VDS= 10V; ID=0.3mA RDS(on) Drain-Source On-Resistance VGS= 10V; ID= 1.5A IGSS Gate-Body Leakage Current VGS= ±30V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= 500V; VGS= 0 VSD Forward On-Voltage ton Turn-on Time toff Turn-off Time IS=1.5A; VGS=0 VGS=10V;ID=1.5A; RL=100Ω 2SK2180 MIN TYPE MAX UNIT 500 V 2.5 3.0 3.5 V 1.8 2.3 Ω ±100 nA 250 µA 1.5 V 45 80 ns 90 140 NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is present.