2SK2096 - Hitachi Semiconductor

2SK2096 Silicon N-Channel MOSFET

2SK2096 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter Avalanche ratings Outline TO-3P D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK2096 Absolute Max.

Features

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• Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter Avalanche ratings Outline TO-3P D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK2096 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C 3. Value at Tch =.