2SK2075 Silicon N Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator Outline REJ03G0994-0200 (Previous: ADE-208-074) Rev.2.00 Sep 07, 2005 RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) D 1. Gate G 2. Drain .
• Low on-resistance
• High speed switching
• Low drive current
• No secondary breakdown
• Suitable for switching regulator
Outline
REJ03G0994-0200 (Previous: ADE-208-074)
Rev.2.00 Sep 07, 2005
RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P)
D
1. Gate
G
2. Drain
(Flange)
3. Source
1 2
S
3
Rev.2.00 Sep 07, 2005 page 1 of 6
2SK2075
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤.
2SK2075 Silicon N-Channel MOS FET ADE-208-074 1st. Edition Application High speed power switching Features • • • • • .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK2070 |
NEC |
N-Channel MOSFET | |
2 | 2SK2071-01L |
INCHANGE |
N-Channel MOSFET | |
3 | 2SK2071-01L |
Fuji Electric |
N-channel MOS-FET | |
4 | 2SK2071-01S |
Fuji Electric |
N-channel MOS-FET | |
5 | 2SK2072-01L |
Fuji Electric |
N-channel MOS-FET | |
6 | 2SK2072-01S |
Fuji Electric |
N-channel MOS-FET | |
7 | 2SK2074 |
Sanyo Semicon Device |
N-Channel MOSFET | |
8 | 2SK2076 |
Sanyo Semicon Device |
N-Channel MOSFET | |
9 | 2SK2077 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
10 | 2SK2078 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
11 | 2SK2078 |
Toshiba |
N-Channel MOSFET | |
12 | 2SK2000-R |
Fuji Electric |
Power MOSFET |